Variability and endurance dilemma in the TiO x /Al 2 O 3 RRAM. (a

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Excellent resistive switching properties of atomic layer-deposited

a) Schematic of RESET analysis by dynamic conductance of the I–V

Filamentary Resistive Switching and Capacitance-Voltage

The schematic of the RRAM device of HfO 2 /TiO 2 /HfO 2

a) Typical I–V curves of RRAM devices with Al/AlOX/Pt structure

The schematic of the RRAM device of HfO 2 /TiO 2 /HfO 2

The schematic of 3D vertical RRAM array (VRRAM_2). The memory cell

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a) Schematic of RESET analysis by dynamic conductance of the I–V

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Point Contact Resistive Switching Memory Based On, 44% OFF

Quantitative retention model for filamentary oxide-based resistive

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The schematic of the RRAM device of HfO 2 /TiO 2 /HfO 2